Nijmegen -- Samples of industrial-grade 650 V, 10 A SiC Schottky diode now available. Parts with 1200 V / 6-20 A current range and automotive-grade parts also planned
Nexperia, the expert in essential semiconductors today announced its entry into the high-power Silicon Carbide (SiC) diodes market with the introduction of 650 V, 10 A SiC Schottky diodes. This is a strategic move for Nexperia, already a trusted supplier of efficient power Gallium Nitride (GaN) FETs, to expand its high-voltage wide bandgap semiconductor device offering.
Nexperia’s first SiC Schottky diode is an industrial-grade device with 650 V repetitive peak reverse voltage (VRRM) and 10 A continuous forward current (IF), designed to combine ultra-high performance and high efficiency with low energy loss in power conversion applications. Providing the added benefit of a high-voltage compliant real 2-pin (R2P) package with higher creepage distance, it is available in a choice of surface mount (DPAK R2P and D2PAK R2P) or through-hole (TO-220-2, TO-247-2) devices. Engineering samples are available on request with a full product release planned for the second quarter of 2022. Nexperia plans to continuously increase its portfolio of SiC diodes, which will lead to a total of 72 products operating at voltage levels of 650 V and 1200 V and with currents in the range of 6-20 A.
In an increasingly energy-conscious world, there is a burgeoning demand for high power applications with superior efficiency and power-density. In this regard, Silicon is fast approaching its physical limits. According to Mark Roeloffzen, General Manager of the Bipolar Discretes Group at Nexperia “Wide bandgap semiconductors like Gallium Nitride and Silicon Carbide are now well placed to meet the stringent needs of high-volume applications, bringing the promise of higher efficiency, greater power density, lower system cost and reduced operating costs for original equipment manufacturers. Nexperia’s diverse portfolio of SiC diodes will bring greater choice and availability to this market.”
Nexperia’s SiC Schottky diodes initially target industrial and consumer applications including:
Nexperia also plans to release automotive-grade devices for use in vehicle electrification applications such as:
The PSC1065H (-J/-K/-L) is the first in a portfolio of SiC Schottky diodes that Nexperia is developing to address the automotive and industrial markets. More information on the new PSC1065x, including product specs and datasheet is available at www.nexperia.com/sic_diodes
Nexperia is a leading expert in the high-volume production of essential semiconductors, components that are required by every electronic design in the world. The company’s extensive portfolio includes diodes, bipolar transistors, ESD protection devices, MOSFETs, GaN FETs and analog & logic ICs. Headquartered in Nijmegen, the Netherlands, Nexperia annually ships more than 100 billion products, meeting the stringent standards set by the automotive industry. These products are recognized as benchmarks in efficiency – in process, size, power and performance — with industry-leading small packages that save valuable energy and space.
With decades of experience in supplying to the world’s leading companies, Nexperia has over 12,000 employees across Asia, Europe and the US. Nexperia, a subsidiary of Wingtech Technology Co., Ltd. (600745.SS), has an extensive IP portfolio and is certified to IATF 16949, ISO 9001, ISO 14001 and ISO 45001.
Nexperia: Efficiency wins.
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