ASFETs for Hotswap and Soft Start are designed specifically to support always-on applications and equipment:
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Hot swap for communications infrastructure |

Nexperia in action
PSMN4R8-100BSE referenced in "Evaluating the ADM1272 High Voltage Positive Hot Swap Controller and Digital Power Monitor with PMBus"
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Products
Type number | Description | Status | Quick access |
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PSMN013-100YSE | N-channel 100 V 13 mΩ standard level MOSFET in LFPAK56 | Production | |
PSMN0R7-25YLD | N-channel 25 V, 0.72 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
PSMN0R9-25YLD | N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
PSMN0R9-30YLD | N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
PSMN1R0-30YLD | N-channel 30 V, 1.0 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
PSMN1R2-25YL | N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK | Production | |
PSMN1R3-30YL | N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK | Production | |
PSMN1R5-30BLE | N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK | Production | |
PSMN1R7-30YL | N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK | Production | |
PSMN1R9-80SSE | N-channel 80 V, 1.9 mOhm MOSFET with enhanced SOA in LFPAK88 | Development | |
PSMN2R0-30YLE | N-channel 30 V 2 mΩ logic level MOSFET in LFPAK | Production | |
PSMN2R3-100SSE | N-channel 100 V, 2.3 mOhm MOSFET with enhanced SOA in LFPAK88 | Development | |
PSMN2R9-100SSE | N-channel 100 V, 2.9 mOhm MOSFET with enhanced SOA in LFPAK88 | Development |
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PSMN3R4-30BLE | N-channel 30 V 3.4 mΩ logic level MOSFET in D2PAK | Production | |
PSMN3R7-100BSE | N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK | Production | |
PSMN4R2-80YSE | N-channel 80 V, 4.2 mOhm MOSFET with enhanced SOA in LFPAK56E | Production | |
PSMN4R8-100BSE | N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK | Production | |
PSMN4R8-100PSE | N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in TO220 package | Production | |
PSMN4R8-100YSE | N-channel 100 V, 4.8 mOhm MOSFET with enhanced SOA in LFPAK56E | Production | |
PSMN7R6-100BSE | N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK | Production | |
PSMN7R8-100PSE | N-channel 100 V 7.8 mΩ standard level MOSFET with improved SOA in TO220 package | Production | |
PSMN8R9-100BSE | N-channel 100 V, 10 mOhm, standard level MOSFET in D2PAK | Production | |
PSMNR51-25YLH | N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology | Production | |
PSMNR58-30YLH | N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology | Production | |
PSMNR60-25YLH | N-channel 25 V, 0.7 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology | Production | |
PSMNR67-30YLE | N-channel 30 V, 0.68 mOhm, ASFET with enhanced SOA in LFPAK56E | Development | |
PSMNR70-30YLH | N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology | Production | |
PSMNR82-30YLE | N-channel 30 V, 0.82 mOhm, ASFET with enhanced SOA in LFPAK56 | Development |
Application note (2) |
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File name | Title | Type | Date |
AN50006 | Power MOSFETs in linear mode | Application note | 2022-04-12 |
AN90016 | Maximum continuous currents in NEXPERIA LFPAK power MOSFETs | Application note | 2020-09-03 |
Leaflet (2) |
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File name | Title | Type | Date |
nexperia_document_leaflet_LFPAK88_2022_CHN | LFPAK88 将功率密度提升到新高度 | Leaflet | 2022-03-10 |
nexperia_document_leaflet_LFPAK88_2022 | LFPAK88 - Driving power-density to the next level | Leaflet | 2022-03-09 |
Selection guide (1) |
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File name | Title | Type | Date |
Nexperia_Selection_guide_2022 | Nexperia Selection Guide 2022 | Selection guide | 2022-01-05 |
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