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GAN041-650WSB

650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

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Orderable parts

Type number Orderable part number Ordering code (12NC) Package Buy from distributors
GAN041-650WSB GAN041-650WSBQ 934661752127 SOT429 Order product
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Ordering, pricing & availability


650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

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SKUStock*MOQPrice per unit**Quantity

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  • EMEA(In stock)(No stock)
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  • Overstock***(In stock)(No stock)
SellerSKUStockMOQ 1101001,00010,000Purchase
SellerSKUStockMOQ 1101001,00010,000Purchase
SellerSKUStockMOQ 1101001,00010,000Purchase
SellerSKUStockMOQ 1101001,00010,000Purchase
* Stock values are subject to change
** Displayed price per unit is based on small quantity orders
*** Authorized resellers for overstock, mature, and discontinued products which are warranted for reliability by the reseller, no longer by Nexperia
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Features and benefits

  • Ultra-low reverse recovery charge
  • Simple gate drive (0 V to +10 V or 12 V)
  • Robust gate oxide (±20 V capability)
  • High gate threshold voltage (+4 V) for very good gate bounce immunity
  • Very low source-drain voltage in reverse conduction mode
  • Transient over-voltage capability

Applications

  • Hard and soft switching converters for industrial and datacom power
  • Bridgeless totempole PFC
  • PV and UPS inverters
  • Servo motor drives

Parametrics

Type numberPackage versionPackage nameProduct statusChannel typeNr of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
GAN041-650WSBSOT429TO-247ProductionN16504117547.25221871503.9N15001472020-05-14

Package

Type numberOrderable part number, (Ordering code (12NC))StatusMarkingPackagePackage informationReflow-/Wave solderingPacking
GAN041-650WSBGAN041-650WSBQ
( 9346 617 52127 )
ActiveGAN041 650WSB
TO-247
(SOT429)
SOT429Horizontal, Rail Pack

Quality, reliability & chemical content

Type numberOrderable part numberChemical contentRoHS / RHFMSLMSL leadfree
GAN041-650WSBGAN041-650WSBQNot available11
Quality and reliability disclaimer

Documentation (19)

File nameTitleTypeDate
GAN041-650WSB650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 packageData sheet2021-01-12
AN90005Understanding Power GaN FET data sheet parametersApplication note2020-06-08
AN90004Probing considerations for fast switching applicationsApplication note2019-11-15
AN90006Circuit design and PCB layout recommendations for GaN FET half bridgesApplication note2019-11-15
AN90021Power GaN technology: the need for efficient power conversionApplication note2020-08-14
AN90030Paralleling of Nexperia GaN FETs in half-bridge topologyApplication note2021-10-19
Nexperia_document_brochure_GaN_2021Nexperia_document_brochure_GaN_2021Brochure2021-05-18
Nexperia_document_brochure_GaN_CHN高功率氮化镓场效应晶体管Brochure2021-05-28
TO-247_SOT429_mkplastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm bodyMarcom graphics2019-02-19
sot429_3dplastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3 lead TO-247Outline 3d2021-06-10
GAN041_650WSBGAN041-650WSB SPICE modelSPICE model2021-03-24
TN90004An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalabilityTechnical note2020-07-21
GaN041-650WSB_cauerGaN041-650WSB Cauer thermal modelThermal model2021-03-25
GaN041-650WSBGaN041-650WSB Foster thermal modelThermal model2021-03-25
GaN041-650WSB_RC_Thermal_ModelGaN041-650WSB RC thermal modelThermal model2021-03-25
nexperia_whitepaper_gan_robustness_aecq101White paper: GaN FET technology and the robustness needed for AEC-Q101 qualificationWhite paper2020-06-08
nexperia_whitepaper_gan_robustness_aecq101_CNWhitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率,以及AEC-Q101 认证所需的耐用性)White paper2020-07-15
nexperia_whitepaper_gan_need_for_efficient_conversionWhite paper: Power GaN technology: the need for efficient power conversionWhite paper2020-07-23
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN白皮书: 功率GaN技术: 高效功率转换的需求White paper2020-08-17

Support

If you are in need of design/technical support, let us know and fill in the answer form, we'll get back to you shortly.

Models

File nameTitleTypeDate
GAN041_650WSBGAN041-650WSB SPICE modelSPICE model2021-03-24
GaN041-650WSB_cauerGaN041-650WSB Cauer thermal modelThermal model2021-03-25
GaN041-650WSBGaN041-650WSB Foster thermal modelThermal model2021-03-25
GaN041-650WSB_RC_Thermal_ModelGaN041-650WSB RC thermal modelThermal model2021-03-25

Ordering, pricing & availability

Type numberOrderable part numberOrdering code (12NC)PackingPacking quantityBuy online
GAN041-650WSBGAN041-650WSBQ934661752127Horizontal, Rail Pack- Order product

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